Overview / James F. Scott -- Novel si-substituted ferroelectric films / Takeshi Kijima and Hiroshi Ishiwara -- Static and dynamic properties of domains / Rainer Waser, Ulrich Bottger and Michael Grossmann -- Nanoscale phenomena in ferroelectric thin films / Valanoor Nagarajan, Chandan S. Ganpule and Ramamoorthy Ramesh -- The sputtering technique / Koukou Suu -- A chemical approach using liquid sources tailored to bi-based layer-structured perovskite thin films / Kazumi Kato -- Recent development in the preparation of ferroelectric thin films by MOCVD / Hiroshi Funakubo -- Materials integration strategies / Orlando Auciello, Anil M. Dhote, Bao T. Liu, Sanjeev Aggarwal and Ramamoorthy Ramesh -- Characterization by scanning nonlinear dielectric microscopy / Yasuo Cho -- The current status of FeRAM / Glen R. Fox, Richard Bailey, William B. Kraus, Fan Chu, Shan Sun and Tom Davenport -- Operation principle and circuit design issues / Ali Sheikholeslami -- High-density integration / Kinam Kim -- Testing and reliability / Yasuhiro Shimada -- Chain FeRAMS / Daisaburo Takashima and Yukihito Oowaki -- Capacitor-on-metal/via-stacked-plug (CMVP) memory cell technologies and application to a nonvolatile SRAM / Hiromitsu Hada, Kazushi Amanuma, Tohru Miwa, Sota Kobayashi, Toru Tatsumi, Yukihiko Maejima, Junichi Yamada, Hiroki Koike, Hideo Toyoshima and Takemitsu Kunio -- The FET-type FeRAM / Hiroshi Ishiwara -- Ferroelectric technologies for portable equipment / Yoshikazu Fujimori, Takashi Nakamura and Hidemi Takasu -- The application of FeRAM to future information technology world / Shoichi Masui, Shunsuke Fueki, Koichi Masutani, Amane Inoue, Toshiyuki Teramoto, Tetsuo Suzuki and Shoichiro Kawashima.